Amplitude calibration of 2D mechanical resonators by nonlinear optical transduction

Contactless characterization of mechanical resonances using Fabry-Perot interferometry is a powerful tool to study the mechanical and dynamical properties of atomically thin membranes. However, amplitude calibration is often not performed, or only possible by making assumptions on the device parameters such as its mass or the temperature. In this work, we demonstrate a calibration technique that directly measures the oscillation amplitude by detecting higher harmonics that arise from nonlinearities in the optical transduction. Employing this technique, we calibrate the resonance amplitude of two-dimensional nanomechanical resonators, without requiring knowledge of their mechanical properties, actuation force, geometric distances or the laser intensity

Graphene Squeeze-Film Pressure Sensors

The operating principle of squeeze-film pressure sensors is based on the pressure dependence of a membrane's resonance frequency, caused by the compression of the surrounding gas which changes the resonator stiffness. To realize such sensors, not only strong and flexible membranes are required, but also minimization of the membrane's mass is essential to maximize responsivity. Here, we demonstrate the use of a few-layer graphene membrane as a squeeze-film pressure sensor. A clear pressure dependence of the membrane's resonant frequency is observed, with a frequency shift of 4 MHz between 8 and 1000 mbar. The sensor shows a reproducible response and no hysteresis. The measured responsivity of the device is 9000 Hz/mbar, which is a factor 45 higher than state-of-the-art MEMS-based squeeze-film pressure sensors while using a 25 times smaller membrane area

Investigating laser induced phase engineering in MoS2 transistors

Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2 transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser patterned MoS2 devices starting from the metallic polymorph has not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T'-MoS2 transistors with the prospect of driving an in-situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS2 become more prominent and the ones from the 1T/1T' phase fade after the laser exposure, the semiconducting properties of the laser patterned devices are not fully restored and the laser treatment ultimately leads to degradation of the transport channel

Static capacitive pressure sensing using a single graphene drum

To realize nanomechanical graphene-based pressure and gas sensors, it is beneficial to have a method to electrically readout the static displacement of a suspended graphene membrane. Capacitive readout, typical in micro-electro-mechanical systems (MEMS), gets increasingly challenging as one starts shrinking the dimensions of these devices, since the expected responsivity of such devices is below 0.1 aF/Pa. To overcome the challenges of detecting small capacitance changes, we design an electrical readout device fabricated on top of an insulating quartz substrate, maximizing the contribution of the suspended membrane to the total capacitance of the device. The capacitance of the drum is further increased by reducing the gap size to 110 nm. Using external pressure load, we demonstrate successful detection of capacitance changes of a single graphene drum down to 50 aF, and pressure differences down to 25 mbar